Descripción
Silicon N-Channel MOS FET. Features. • High Output Power, High Efficiency. Pout = +29.7 dBm, PAE = 68% (f = 520 MHz).
Type Designator: RQA0004PXDQS
Marking code: PX
Type of RQA0004PXDQS transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 3
Maximum drain-source voltage |Uds|, V: 16
Maximum gate-source voltage |Ugs|, V: 5
Maximum drain current |Id|, A: 0.3
Maximum junction temperature (Tj), °C: 150
Rise Time of RQA0004PXDQS transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 5
Maximum drain-source on-state resistance (Rds), Ohm: 3.4
Package: UPAK
